A1P50S65M2 STMicroelectronics
Виробник: STMicroelectronics
IGBT Modules ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, so
IGBT Modules ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, so
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 3915.44 грн |
10+ | 3601.54 грн |
18+ | 2999.58 грн |
108+ | 2830.01 грн |
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Технічний опис A1P50S65M2 STMicroelectronics
Description: IGBT MOD 650V 50A 208W ACEPACK1, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: ACEPACK™ 1, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 208 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 4.15 nF @ 25 V.
Інші пропозиції A1P50S65M2
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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A1P50S65M2 | Виробник : STMicroelectronics |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw Application: Inverter; motors Power dissipation: 208W Gate-emitter voltage: ±20V Collector current: 50A Max. off-state voltage: 650V Type of module: IGBT Topology: IGBT half-bridge x3; NTC thermistor Semiconductor structure: transistor/transistor Case: ACEPACK™1 Pulsed collector current: 100A |
товар відсутній |
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A1P50S65M2 | Виробник : STMicroelectronics |
Description: IGBT MOD 650V 50A 208W ACEPACK1 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: ACEPACK™ 1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 208 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 4.15 nF @ 25 V |
товар відсутній |
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A1P50S65M2 | Виробник : STMicroelectronics |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw Application: Inverter; motors Power dissipation: 208W Gate-emitter voltage: ±20V Collector current: 50A Max. off-state voltage: 650V Type of module: IGBT Topology: IGBT half-bridge x3; NTC thermistor Semiconductor structure: transistor/transistor Case: ACEPACK™1 Pulsed collector current: 100A |
товар відсутній |