AIGW50N65H5XKSA1 Infineon Technologies


infineon-aigw50n65h5-ds-v02_01-en.pdf Виробник: Infineon Technologies
AIGW50N65H5XKSA1
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Технічний опис AIGW50N65H5XKSA1 Infineon Technologies

Description: IGBT 650V TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: PG-TO247-3-41, IGBT Type: Trench, Td (on/off) @ 25°C: 21ns/156ns, Switching Energy: 490µJ (on), 140µJ (off), Test Condition: 400V, 25A, 12Ohm, 15V, Gate Charge: 1018 nC, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 270 W, Grade: Automotive, Qualification: AEC-Q101.

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AIGW50N65H5XKSA1 AIGW50N65H5XKSA1 Виробник : INFINEON TECHNOLOGIES AIGW50N65H5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 33ns
Turn-off time: 184ns
кількість в упаковці: 240 шт
товар відсутній
AIGW50N65H5XKSA1 AIGW50N65H5XKSA1 Виробник : Infineon Technologies Infineon-AIGW50N65H5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d0800c1d57f2a Description: IGBT 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 1018 nC
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
AIGW50N65H5XKSA1 AIGW50N65H5XKSA1 Виробник : Infineon Technologies Infineon_AIGW50N65H5_DS_v02_01_EN-1129123.pdf IGBT Transistors DISCRETES
товар відсутній
AIGW50N65H5XKSA1 AIGW50N65H5XKSA1 Виробник : INFINEON TECHNOLOGIES AIGW50N65H5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 33ns
Turn-off time: 184ns
товар відсутній