AIHD03N60RFATMA1 Infineon Technologies
Виробник: Infineon Technologies
IGBT with integrated diode in packages offering space saving advantage
IGBT with integrated diode in packages offering space saving advantage
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис AIHD03N60RFATMA1 Infineon Technologies
Description: IC DISCRETE 600V TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A, Supplier Device Package: PG-TO252-3-313, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 10ns/128ns, Switching Energy: 50µJ (on), 40µJ (off), Test Condition: 400V, 2.5A, 68Ohm, 15V, Gate Charge: 17.1 nC, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 7.5 A, Power - Max: 53.6 W.
Інші пропозиції AIHD03N60RFATMA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
AIHD03N60RFATMA1 | Виробник : Infineon Technologies |
Description: IC DISCRETE 600V TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A Supplier Device Package: PG-TO252-3-313 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 10ns/128ns Switching Energy: 50µJ (on), 40µJ (off) Test Condition: 400V, 2.5A, 68Ohm, 15V Gate Charge: 17.1 nC Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 7.5 A Power - Max: 53.6 W |
товар відсутній |
||
AIHD03N60RFATMA1 | Виробник : Infineon Technologies | IGBT Transistors DISCRETES |
товар відсутній |