AIHD03N60RFATMA1

AIHD03N60RFATMA1 Infineon Technologies


infineon-aihd03n60rf-ds-v02_01-en.pdf Виробник: Infineon Technologies
IGBT with integrated diode in packages offering space saving advantage
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Технічний опис AIHD03N60RFATMA1 Infineon Technologies

Description: IC DISCRETE 600V TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A, Supplier Device Package: PG-TO252-3-313, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 10ns/128ns, Switching Energy: 50µJ (on), 40µJ (off), Test Condition: 400V, 2.5A, 68Ohm, 15V, Gate Charge: 17.1 nC, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 7.5 A, Power - Max: 53.6 W.

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AIHD03N60RFATMA1 AIHD03N60RFATMA1 Виробник : Infineon Technologies Description: IC DISCRETE 600V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/128ns
Switching Energy: 50µJ (on), 40µJ (off)
Test Condition: 400V, 2.5A, 68Ohm, 15V
Gate Charge: 17.1 nC
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 7.5 A
Power - Max: 53.6 W
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AIHD03N60RFATMA1 Виробник : Infineon Technologies IGBT Transistors DISCRETES
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