AIHD15N60RFATMA1

AIHD15N60RFATMA1 Infineon Technologies


Виробник: Infineon Technologies
Description: IC DISCRETE 600V TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 240 W
на замовлення 8515 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
243+81.81 грн
Мінімальне замовлення: 243
Відгуки про товар
Написати відгук

Технічний опис AIHD15N60RFATMA1 Infineon Technologies

Description: IC DISCRETE 600V TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A, Supplier Device Package: PG-TO252-3-313, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 13ns/160ns, Switching Energy: 270µJ (on), 250µJ (off), Test Condition: 400V, 15A, 15Ohm, 15V, Gate Charge: 90 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 240 W.

Інші пропозиції AIHD15N60RFATMA1

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
AIHD15N60RFATMA1 Виробник : Infineon Technologies 71infineon-aihd15n60rf-ds-v02_01-en.pdffileid5546d4625c167129015c53.pdf igbt with integrated diode
товар відсутній
AIHD15N60RFATMA1 AIHD15N60RFATMA1 Виробник : INFINEON TECHNOLOGIES AIHD15N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-on time: 28ns
Turn-off time: 177ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 2500 шт
товар відсутній
AIHD15N60RFATMA1 AIHD15N60RFATMA1 Виробник : Infineon Technologies Description: IC DISCRETE 600V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 240 W
товар відсутній
AIHD15N60RFATMA1 AIHD15N60RFATMA1 Виробник : Infineon Technologies infineon_infn-s-a0003257518-1-1749502.pdf IGBT Transistors DISCRETES
товар відсутній
AIHD15N60RFATMA1 AIHD15N60RFATMA1 Виробник : INFINEON TECHNOLOGIES AIHD15N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-on time: 28ns
Turn-off time: 177ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
товар відсутній