AOB2910L

AOB2910L Alpha & Omega Semiconductor


aob2910l.pdf Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) D2PAK T/R
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Технічний опис AOB2910L Alpha & Omega Semiconductor

Description: MOSFET N CH 100V 6A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 23.5mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V.

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AOB2910L AOB2910L Виробник : ALPHA & OMEGA SEMICONDUCTOR AOB2910L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 25W; TO263
Mounting: SMD
Power dissipation: 25W
Polarisation: unipolar
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO263
Drain-source voltage: 100V
Drain current: 21A
On-state resistance: 23.5mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 800 шт
товар відсутній
AOB2910L AOB2910L Виробник : Alpha & Omega Semiconductor Inc. AOB2910L.pdf Description: MOSFET N CH 100V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
товар відсутній
AOB2910L AOB2910L Виробник : ALPHA & OMEGA SEMICONDUCTOR AOB2910L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 25W; TO263
Mounting: SMD
Power dissipation: 25W
Polarisation: unipolar
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO263
Drain-source voltage: 100V
Drain current: 21A
On-state resistance: 23.5mΩ
Type of transistor: N-MOSFET
товар відсутній