AOC3862 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Mounting: SMD
Power dissipation: 2.5W
Gate charge: 46nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Semiconductor structure: common drain
Case: DFN6
On-state resistance: 3mΩ
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Mounting: SMD
Power dissipation: 2.5W
Gate charge: 46nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Semiconductor structure: common drain
Case: DFN6
On-state resistance: 3mΩ
кількість в упаковці: 1 шт
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Технічний опис AOC3862 ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain, Mounting: SMD, Power dissipation: 2.5W, Gate charge: 46nC, Polarisation: unipolar, Features of semiconductor devices: ESD protected gate, Kind of channel: enhanced, Drain-source voltage: 12V, Type of transistor: N-MOSFET x2, Gate-source voltage: ±8V, Semiconductor structure: common drain, Case: DFN6, On-state resistance: 3mΩ, кількість в упаковці: 1 шт.
Інші пропозиції AOC3862
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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AOC3862 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-XDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Gate Charge (Qg) (Max) @ Vgs: 46nC @ 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-DFN (3.55x1.77) |
товар відсутній |
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AOC3862 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain Mounting: SMD Power dissipation: 2.5W Gate charge: 46nC Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Drain-source voltage: 12V Type of transistor: N-MOSFET x2 Gate-source voltage: ±8V Semiconductor structure: common drain Case: DFN6 On-state resistance: 3mΩ |
товар відсутній |