AOC3862 ALPHA & OMEGA SEMICONDUCTOR


AOC3862.pdf Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Mounting: SMD
Power dissipation: 2.5W
Gate charge: 46nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Semiconductor structure: common drain
Case: DFN6
On-state resistance: 3mΩ
кількість в упаковці: 1 шт
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Технічний опис AOC3862 ALPHA & OMEGA SEMICONDUCTOR

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain, Mounting: SMD, Power dissipation: 2.5W, Gate charge: 46nC, Polarisation: unipolar, Features of semiconductor devices: ESD protected gate, Kind of channel: enhanced, Drain-source voltage: 12V, Type of transistor: N-MOSFET x2, Gate-source voltage: ±8V, Semiconductor structure: common drain, Case: DFN6, On-state resistance: 3mΩ, кількість в упаковці: 1 шт.

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AOC3862 Виробник : Alpha & Omega Semiconductor Inc. AOC3862.pdf Description: MOSFET 2N-CH 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-DFN (3.55x1.77)
товар відсутній
AOC3862 Виробник : ALPHA & OMEGA SEMICONDUCTOR AOC3862.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Mounting: SMD
Power dissipation: 2.5W
Gate charge: 46nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Semiconductor structure: common drain
Case: DFN6
On-state resistance: 3mΩ
товар відсутній