AOCA24106E ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.7W; DFN6; common drain
Mounting: SMD
Case: DFN6
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.7W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис AOCA24106E ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.7W; DFN6; common drain, Mounting: SMD, Case: DFN6, Semiconductor structure: common drain, Drain-source voltage: 12V, On-state resistance: 5.6mΩ, Type of transistor: N-MOSFET x2, Power dissipation: 2.7W, Polarisation: unipolar, Features of semiconductor devices: ESD protected gate, Gate charge: 18nC, Kind of channel: enhanced, Gate-source voltage: ±8V, кількість в упаковці: 1 шт.
Інші пропозиції AOCA24106E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| AOCA24106E | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.7W; DFN6; common drain Mounting: SMD Case: DFN6 Semiconductor structure: common drain Drain-source voltage: 12V On-state resistance: 5.6mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.7W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±8V |
товар відсутній |