AOK30B60D1

AOK30B60D1 Alpha & Omega Semiconductor


595aok30b60d1.pdf Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Tube
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Технічний опис AOK30B60D1 Alpha & Omega Semiconductor

Description: IGBT 600V 60A 208W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 120 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 26A, Supplier Device Package: TO-247, Td (on/off) @ 25°C: 20ns/58ns, Switching Energy: 1.1mJ (on), 240µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 34 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 96 A, Power - Max: 208 W.

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AOK30B60D1 AOK30B60D1 Виробник : ALPHA & OMEGA SEMICONDUCTOR AOK30B60D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 89ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.24mJ
Turn-on switching energy: 1.1mJ
кількість в упаковці: 1 шт
товар відсутній
AOK30B60D1 AOK30B60D1 Виробник : Alpha & Omega Semiconductor Inc. AOK30B60D1.pdf Description: IGBT 600V 60A 208W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 26A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 20ns/58ns
Switching Energy: 1.1mJ (on), 240µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 34 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 208 W
товар відсутній
AOK30B60D1 AOK30B60D1 Виробник : ALPHA & OMEGA SEMICONDUCTOR AOK30B60D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 83W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 89ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.24mJ
Turn-on switching energy: 1.1mJ
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