AOK30B65M2

AOK30B65M2 Alpha & Omega Semiconductor Inc.


AOK30B65M2.pdf Виробник: Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 339 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 34ns/138ns
Switching Energy: 1.02mJ (on), 410µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 300 W
на замовлення 160 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+302.51 грн
10+ 244.46 грн
100+ 197.76 грн
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Технічний опис AOK30B65M2 Alpha & Omega Semiconductor Inc.

Description: IGBT 650V 30A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 339 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: TO-247, Td (on/off) @ 25°C: 34ns/138ns, Switching Energy: 1.02mJ (on), 410µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 63 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 300 W.

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AOK30B65M2 AOK30B65M2 Виробник : ALPHA & OMEGA SEMICONDUCTOR AOK30B65M2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ
Turn-off time: 193ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.66V
Collector current: 30A
Turn-off switching energy: 0.41mJ
Mounting: THT
Turn-on switching energy: 1.02mJ
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 63nC
Pulsed collector current: 90A
Type of transistor: IGBT
Turn-on time: 76ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт
товар відсутній
AOK30B65M2 AOK30B65M2 Виробник : ALPHA & OMEGA SEMICONDUCTOR AOK30B65M2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ
Turn-off time: 193ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.66V
Collector current: 30A
Turn-off switching energy: 0.41mJ
Mounting: THT
Turn-on switching energy: 1.02mJ
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 63nC
Pulsed collector current: 90A
Type of transistor: IGBT
Turn-on time: 76ns
Kind of package: tube
Case: TO247
товар відсутній