AOK50B65H1 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 188W; TO247; Eoff: 0.85mJ; Eon: 1.92mJ
Turn-off time: 206ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.9V
Collector current: 50A
Turn-off switching energy: 0.85mJ
Mounting: THT
Turn-on switching energy: 1.92mJ
Collector-emitter voltage: 650V
Power dissipation: 188W
Gate charge: 76nC
Pulsed collector current: 150A
Type of transistor: IGBT
Turn-on time: 111ns
Kind of package: tube
Case: TO247
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 188W; TO247; Eoff: 0.85mJ; Eon: 1.92mJ
Turn-off time: 206ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.9V
Collector current: 50A
Turn-off switching energy: 0.85mJ
Mounting: THT
Turn-on switching energy: 1.92mJ
Collector-emitter voltage: 650V
Power dissipation: 188W
Gate charge: 76nC
Pulsed collector current: 150A
Type of transistor: IGBT
Turn-on time: 111ns
Kind of package: tube
Case: TO247
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 239.2 грн |
3+ | 196.51 грн |
5+ | 164.68 грн |
14+ | 155.69 грн |
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Технічний опис AOK50B65H1 ALPHA & OMEGA SEMICONDUCTOR
Description: IGBT 650V 50A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 261 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A, Supplier Device Package: TO-247, Td (on/off) @ 25°C: 37ns/141ns, Switching Energy: 1.92mJ (on), 850µJ (off), Test Condition: 400V, 50A, 6Ohm, 15V, Gate Charge: 76 nC, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 375 W.
Інші пропозиції AOK50B65H1 за ціною від 183.5 грн до 287.04 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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AOK50B65H1 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 188W; TO247; Eoff: 0.85mJ; Eon: 1.92mJ Turn-off time: 206ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.9V Collector current: 50A Turn-off switching energy: 0.85mJ Mounting: THT Turn-on switching energy: 1.92mJ Collector-emitter voltage: 650V Power dissipation: 188W Gate charge: 76nC Pulsed collector current: 150A Type of transistor: IGBT Turn-on time: 111ns Kind of package: tube Case: TO247 кількість в упаковці: 1 шт |
на замовлення 95 шт: термін постачання 7-14 дні (днів) |
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AOK50B65H1 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 50A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 261 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 37ns/141ns Switching Energy: 1.92mJ (on), 850µJ (off) Test Condition: 400V, 50A, 6Ohm, 15V Gate Charge: 76 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 375 W |
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