AOK60B60D1 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 167W; TO247; Eoff: 0.73mJ; Eon: 3.1mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 167W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 210A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 105ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.73mJ
Turn-on switching energy: 3.1mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 167W; TO247; Eoff: 0.73mJ; Eon: 3.1mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 167W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 210A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 105ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.73mJ
Turn-on switching energy: 3.1mJ
на замовлення 104 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 361.4 грн |
3+ | 302.38 грн |
4+ | 240.79 грн |
10+ | 227.65 грн |
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Технічний опис AOK60B60D1 ALPHA & OMEGA SEMICONDUCTOR
Description: IGBT 600V 120A 417W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 137 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A, Supplier Device Package: TO-247, Td (on/off) @ 25°C: 32ns/74ns, Switching Energy: 3.1mJ (on), 730µJ (off), Test Condition: 400V, 60A, 5Ohm, 15V, Gate Charge: 75 nC, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 210 A, Power - Max: 417 W.
Інші пропозиції AOK60B60D1 за ціною від 268.19 грн до 433.68 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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AOK60B60D1 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 60A; 167W; TO247; Eoff: 0.73mJ; Eon: 3.1mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 167W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 210A Mounting: THT Gate charge: 75nC Kind of package: tube Turn-on time: 109ns Turn-off time: 105ns Collector-emitter saturation voltage: 1.85V Turn-off switching energy: 0.73mJ Turn-on switching energy: 3.1mJ кількість в упаковці: 1 шт |
на замовлення 104 шт: термін постачання 7-14 дні (днів) |
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AOK60B60D1 | Виробник : Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 120A 417000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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AOK60B60D1 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: IGBT 600V 120A 417W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 137 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 32ns/74ns Switching Energy: 3.1mJ (on), 730µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 75 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 210 A Power - Max: 417 W |
товар відсутній |