AOK60B65M3 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 250W; TO247; Eoff: 1.3mJ; Eon: 2.6mJ
Turn-off time: 285ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.94V
Collector current: 60A
Turn-off switching energy: 1.3mJ
Mounting: THT
Turn-on switching energy: 2.6mJ
Collector-emitter voltage: 650V
Power dissipation: 250W
Gate charge: 106nC
Pulsed collector current: 180A
Type of transistor: IGBT
Turn-on time: 125ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт
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Технічний опис AOK60B65M3 ALPHA & OMEGA SEMICONDUCTOR
Description: IGBT 650V 60A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 346 ns, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 60A, Supplier Device Package: TO-247, Td (on/off) @ 25°C: 44ns/166ns, Switching Energy: 2.6mJ (on), 1.3mJ (off), Test Condition: 400V, 60A, 5Ohm, 15V, Gate Charge: 106 nC, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 180 A, Power - Max: 500 W.
Інші пропозиції AOK60B65M3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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AOK60B65M3 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 60A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 346 ns Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 60A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 44ns/166ns Switching Energy: 2.6mJ (on), 1.3mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 106 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 500 W |
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AOK60B65M3 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 250W; TO247; Eoff: 1.3mJ; Eon: 2.6mJ Turn-off time: 285ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.94V Collector current: 60A Turn-off switching energy: 1.3mJ Mounting: THT Turn-on switching energy: 2.6mJ Collector-emitter voltage: 650V Power dissipation: 250W Gate charge: 106nC Pulsed collector current: 180A Type of transistor: IGBT Turn-on time: 125ns Kind of package: tube Case: TO247 |
товар відсутній |