Технічний опис AOK75B65H1 Alpha & Omega Semiconductor
Description: IGBT 650V 75A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 295 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A, Supplier Device Package: TO-247, Td (on/off) @ 25°C: 47ns/175ns, Switching Energy: 3.77mJ (on), 2.04mJ (off), Test Condition: 400V, 75A, 4Ohm, 15V, Gate Charge: 109 nC, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 556 W.
Інші пропозиції AOK75B65H1
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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AOK75B65H1 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 278W; TO247; Eoff: 2.04mJ; Eon: 3.77mJ Turn-off time: 319ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.85V Collector current: 75A Turn-off switching energy: 2.04mJ Mounting: THT Turn-on switching energy: 3.77mJ Collector-emitter voltage: 650V Power dissipation: 278W Gate charge: 109nC Pulsed collector current: 225A Type of transistor: IGBT Turn-on time: 140ns Kind of package: tube Case: TO247 кількість в упаковці: 1 шт |
товар відсутній |
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AOK75B65H1 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 75A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 295 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 47ns/175ns Switching Energy: 3.77mJ (on), 2.04mJ (off) Test Condition: 400V, 75A, 4Ohm, 15V Gate Charge: 109 nC Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 556 W |
товар відсутній |
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AOK75B65H1 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 278W; TO247; Eoff: 2.04mJ; Eon: 3.77mJ Turn-off time: 319ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.85V Collector current: 75A Turn-off switching energy: 2.04mJ Mounting: THT Turn-on switching energy: 3.77mJ Collector-emitter voltage: 650V Power dissipation: 278W Gate charge: 109nC Pulsed collector current: 225A Type of transistor: IGBT Turn-on time: 140ns Kind of package: tube Case: TO247 |
товар відсутній |