AON6812 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 22A; 12.5W; DFN5x6
Mounting: SMD
Case: DFN5x6
Power dissipation: 12.5W
Polarisation: unipolar
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Semiconductor structure: common drain
Drain-source voltage: 30V
Drain current: 22A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET x2
кількість в упаковці: 1 шт
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Технічний опис AON6812 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET 2N-CH 30V 27A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 27A, Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 15V, Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN-EP (5x6).
Інші пропозиції AON6812
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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AON6812 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 27A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 15V Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN-EP (5x6) |
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AON6812 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 22A; 12.5W; DFN5x6 Mounting: SMD Case: DFN5x6 Power dissipation: 12.5W Polarisation: unipolar Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±20V Semiconductor structure: common drain Drain-source voltage: 30V Drain current: 22A On-state resistance: 4mΩ Type of transistor: N-MOSFET x2 |
товар відсутній |