AOT5B65M1 Alpha & Omega Semiconductor
Виробник: Alpha & Omega SemiconductorTrans IGBT Chip N-CH 650V 10A 83000mW 3-Pin(3+Tab) TO-220 Tube
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Технічний опис AOT5B65M1 Alpha & Omega Semiconductor
Description: IGBT 650V 5A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 195 ns, Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A, Supplier Device Package: TO-220, Td (on/off) @ 25°C: 8.5ns/106ns, Switching Energy: 80µJ (on), 70µJ (off), Test Condition: 400V, 5A, 60Ohm, 15V, Gate Charge: 14 nC, Part Status: Active, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 15 A, Power - Max: 83 W.
Інші пропозиції AOT5B65M1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| AOT5B65M1 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
AOT5B65M1 THT IGBT transistors |
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AOT5B65M1 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 5A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 8.5ns/106ns Switching Energy: 80µJ (on), 70µJ (off) Test Condition: 400V, 5A, 60Ohm, 15V Gate Charge: 14 nC Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 15 A Power - Max: 83 W |
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