Технічний опис AOTF11N60L Alpha & Omega Semiconductor
Description: MOSFET N-CH 600V 11A TO220-3F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V, Power Dissipation (Max): 37.9W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V.
Інші пропозиції AOTF11N60L
| Фото | Назва | Виробник | Інформація |
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AOTF11N60L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8A; 37.9W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 37.9W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: THT Gate charge: 37nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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AOTF11N60L | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 600V 11A TO220-3F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V Power Dissipation (Max): 37.9W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V |
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AOTF11N60L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 37.9W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 37.9W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: THT Gate charge: 37nC Kind of channel: enhanced |
товар відсутній |