Технічний опис AOTF15B60D2 Alpha & Omega Semiconductor
Description: IGBT 15A, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 105 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A, Supplier Device Package: TO-220F, Td (on/off) @ 25°C: 10ns/72ns, Switching Energy: 260µJ (on), 70µJ (off), Test Condition: 400V, 10A, 30Ohm, 15V, Gate Charge: 17.4 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 23 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 42 W.
Інші пропозиції AOTF15B60D2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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AOTF15B60D2 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 15A; 16.7W; TO220F; Eoff: 0.07mJ; Eon: 0.26mJ Mounting: THT Power dissipation: 16.7W Case: TO220F Kind of package: tube Turn-on time: 25ns Turn-off time: 80.8ns Type of transistor: IGBT Gate charge: 17.4nC Turn-on switching energy: 0.26mJ Turn-off switching energy: 0.07mJ Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector-emitter saturation voltage: 1.53V Collector current: 15A Pulsed collector current: 40A кількість в упаковці: 1 шт |
товар відсутній |
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AOTF15B60D2 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: IGBT 15A Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A Supplier Device Package: TO-220F Td (on/off) @ 25°C: 10ns/72ns Switching Energy: 260µJ (on), 70µJ (off) Test Condition: 400V, 10A, 30Ohm, 15V Gate Charge: 17.4 nC Part Status: Obsolete Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 42 W |
товар відсутній |
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AOTF15B60D2 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 15A; 16.7W; TO220F; Eoff: 0.07mJ; Eon: 0.26mJ Mounting: THT Power dissipation: 16.7W Case: TO220F Kind of package: tube Turn-on time: 25ns Turn-off time: 80.8ns Type of transistor: IGBT Gate charge: 17.4nC Turn-on switching energy: 0.26mJ Turn-off switching energy: 0.07mJ Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector-emitter saturation voltage: 1.53V Collector current: 15A Pulsed collector current: 40A |
товар відсутній |