AOTF15B65M1 Alpha & Omega Semiconductor
Виробник: Alpha & Omega SemiconductorTrans IGBT Chip N-CH 650V 30A 36000mW 3-Pin(3+Tab) TO-220F Tube
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Технічний опис AOTF15B65M1 Alpha & Omega Semiconductor
Description: IGBT 650V 15A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 317 ns, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A, Supplier Device Package: TO-220, Td (on/off) @ 25°C: 15ns/94ns, Switching Energy: 290µJ (on), 200µJ (off), Test Condition: 400V, 15A, 20Ohm, 15V, Gate Charge: 32 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 36 W.
Інші пропозиції AOTF15B65M1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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AOTF15B65M1 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 15A; 14W; TO220F; Eoff: 0.2mJ; Eon: 0.29mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 14W Case: TO220F Gate-emitter voltage: ±30V Pulsed collector current: 45A Mounting: THT Gate charge: 32nC Kind of package: tube Turn-on time: 34ns Turn-off time: 135ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.2mJ Turn-on switching energy: 0.29mJ кількість в упаковці: 1 шт |
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AOTF15B65M1 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 15A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 317 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 15ns/94ns Switching Energy: 290µJ (on), 200µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 32 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 36 W |
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AOTF15B65M1 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 15A; 14W; TO220F; Eoff: 0.2mJ; Eon: 0.29mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 14W Case: TO220F Gate-emitter voltage: ±30V Pulsed collector current: 45A Mounting: THT Gate charge: 32nC Kind of package: tube Turn-on time: 34ns Turn-off time: 135ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.2mJ Turn-on switching energy: 0.29mJ |
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