AOTF15B65M3 Alpha & Omega Semiconductor
Виробник: Alpha & Omega Semiconductor650V, 15A Alpha IGBT With soft and fast recovery anti-parallel diode
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Технічний опис AOTF15B65M3 Alpha & Omega Semiconductor
Description: IGBT 650V 15A TO-220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 263 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A, Supplier Device Package: TO-220F, Td (on/off) @ 25°C: 10ns/68ns, Switching Energy: 280µJ (on), 190µJ (off), Test Condition: 400V, 15A, 20Ohm, 15V, Gate Charge: 25.4 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 30 W.
Інші пропозиції AOTF15B65M3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| AOTF15B65M3 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
AOTF15B65M3 THT IGBT transistors |
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AOTF15B65M3 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 15A TO-220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 263 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Supplier Device Package: TO-220F Td (on/off) @ 25°C: 10ns/68ns Switching Energy: 280µJ (on), 190µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 25.4 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 30 W |
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