AS6C8008B-55ZIN ALLIANCE MEMORY


Alliance_Selection_Guide _Print2024.pdf Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 3V
кількість в упаковці: 1 шт
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Технічний опис AS6C8008B-55ZIN ALLIANCE MEMORY

Description: IC SRAM 8MBIT PARALLEL 44TSOP, Packaging: Tray, Package / Case: 44-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 44-TSOP II, Write Cycle Time - Word, Page: 55ns, Memory Interface: Parallel, Access Time: 55 ns, Memory Organization: 1M x 8.

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AS6C8008B-55ZIN Виробник : Alliance Memory, Inc. AllianceMemory_8M_LPSRAM_AS6C8008B-xxZIN_xxBIN_April2023_V1.1.pdf Description: IC SRAM 8MBIT PARALLEL 44TSOP
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 8
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AS6C8008B-55ZIN AS6C8008B-55ZIN Виробник : Alliance Memory AllianceMemory_8M_LPSRAM_AS6C8008B_45_55ZIN_Novemb-1990016.pdf SRAM LP SRAM, 8Mb, 1M x 8, 2.7 - 3.6V, 48ball TFBGA, 55ns, Industrial Temp - Tray
товар відсутній
AS6C8008B-55ZIN Виробник : ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 1024kx8bit; 3V; 55ns; TSOP44 II; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 1024kx8bit
Access time: 55ns
Case: TSOP44 II
Mounting: SMD
Integrated circuit features: LPC
IC width: 400mils
Operating voltage: 3V
товар відсутній