BAS116HMFHT116 ROHM Semiconductor
Виробник: ROHM SemiconductorDiodes - General Purpose, Power, Switching 100V Vrm; 500mA Ifm Swtch Diode SOT-23
на замовлення 126 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.11 грн |
| 20+ | 15.95 грн |
| 100+ | 7.4 грн |
| 500+ | 4.89 грн |
| 1000+ | 3.3 грн |
| 3000+ | 2.97 грн |
| 9000+ | 2.44 грн |
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Технічний опис BAS116HMFHT116 ROHM Semiconductor
Description: DIODE GEN PURP 80V 215MA SSD3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 µs, Technology: Standard, Capacitance @ Vr, F: 4pF @ 0V, 1MHz, Current - Average Rectified (Io): 215mA, Supplier Device Package: SSD3, Operating Temperature - Junction: 150°C (Max), Grade: Automotive, Part Status: Not For New Designs, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 5 nA @ 75 V, Qualification: AEC-Q101.
Інші пропозиції BAS116HMFHT116
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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BAS116HMFHT116 | Виробник : Rohm Semiconductor |
Description: DIODE GEN PURP 80V 215MA SSD3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Qualification: AEC-Q101 |
товар відсутній |
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BAS116HMFHT116 | Виробник : Rohm Semiconductor |
Description: DIODE GEN PURP 80V 215MA SSD3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Qualification: AEC-Q101 |
товар відсутній |