Технічний опис BC818K-40E6327 Infineon
Description: BIPOLAR GEN PURPOSE TRANSISTOR, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V, Frequency - Transition: 170MHz, Supplier Device Package: PG-SOT23, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 25 V, Power - Max: 500 mW, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BC818K-40E6327
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BC818K-40E6327 | Виробник : Infineon Technologies |
 Description: BIPOLAR GEN PURPOSE TRANSISTORPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 170MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 500 mW Grade: Automotive Qualification: AEC-Q101 |
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BC 818K-40 E6327 | Виробник : Infineon Technologies |
Bipolar Transistors - BJT AF TRANS GP BJT NPN 25V 0.5A |
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