Технічний опис BFS17,215 NXP Semiconductors
Description: RF TRANS NPN 15V 1GHZ TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Power - Max: 300mW, Current - Collector (Ic) (Max): 25mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V, Frequency - Transition: 1GHz, Noise Figure (dB Typ @ f): 4.5dB @ 500MHz, Supplier Device Package: SOT-23 (TO-236AB), Part Status: Obsolete.
Інші пропозиції BFS17,215
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BFS17,215 | Виробник : NXP USA Inc. |
 Description: RF TRANS NPN 15V 1GHZ TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V Frequency - Transition: 1GHz Noise Figure (dB Typ @ f): 4.5dB @ 500MHz Supplier Device Package: SOT-23 (TO-236AB) Part Status: Obsolete |
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BFS17,215 | Виробник : NXP USA Inc. |
Description: RF TRANS NPN 15V 1GHZ TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V Frequency - Transition: 1GHz Noise Figure (dB Typ @ f): 4.5dB @ 500MHz Supplier Device Package: SOT-23 (TO-236AB) Part Status: Obsolete |
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BFS17.215 | Виробник : NXP |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 25V; 25mA; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 25mA Case: SOT23 Mounting: SMD Frequency: 2.5MHz |
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