BM60212FV-CE2 Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: IC GATE DRVR HI/LOW SIDE 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 24V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 20-SSOP-BW
Rise / Fall Time (Typ): 50ns, 50ns
Channel Type: Synchronous
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 4.5A, 3.9A
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 170.16 грн |
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Технічний опис BM60212FV-CE2 Rohm Semiconductor
Description: IC GATE DRVR HI/LOW SIDE 20SSOP, Packaging: Tape & Reel (TR), Package / Case: 20-SSOP (0.240", 6.10mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 10V ~ 24V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 1200 V, Supplier Device Package: 20-SSOP-BW, Rise / Fall Time (Typ): 50ns, 50ns, Channel Type: Synchronous, Driven Configuration: High-Side and Low-Side, Number of Drivers: 2, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2V, Current - Peak Output (Source, Sink): 4.5A, 3.9A, Grade: Automotive, Part Status: Active, DigiKey Programmable: Not Verified, Qualification: AEC-Q100.
Інші пропозиції BM60212FV-CE2 за ціною від 157.86 грн до 356.79 грн
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BM60212FV-CE2 | Виробник : Rohm Semiconductor |
Description: IC GATE DRVR HI/LOW SIDE 20SSOP Packaging: Cut Tape (CT) Package / Case: 20-SSOP (0.240", 6.10mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 24V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 1200 V Supplier Device Package: 20-SSOP-BW Rise / Fall Time (Typ): 50ns, 50ns Channel Type: Synchronous Driven Configuration: High-Side and Low-Side Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 4.5A, 3.9A Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3550 шт: термін постачання 21-31 дні (днів) |
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BM60212FV-CE2 | Виробник : ROHM Semiconductor |
Gate Drivers The BM60212FV-C is high and low side drive IC which operates up to 1200V with bootstrap operation, which can drive N-channel power MOSFET and IGBT. Under-voltage Lockout (UVLO) function and Miller Clamp function are built-in. |
на замовлення 5433 шт: термін постачання 21-30 дні (днів) |
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