BS2114F-E2

BS2114F-E2 ROHM Semiconductor


bs2114f-e-1873955.pdf Виробник: ROHM Semiconductor
Gate Drivers 600V HV HIGH&LOW SIDE GATE DRV
на замовлення 9 шт:

термін постачання 21-30 дні (днів)
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Технічний опис BS2114F-E2 ROHM Semiconductor

Description: 600V HIGH VOLTAGE HIGH & LOW-SID, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.173", 4.40mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 10V ~ 20V, Input Type: Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-SOP, Rise / Fall Time (Typ): 30ns, 30ns, Channel Type: Independent, Driven Configuration: High-Side or Low-Side, Number of Drivers: 2, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.6V, Part Status: Obsolete, DigiKey Programmable: Not Verified.

Інші пропозиції BS2114F-E2

Фото Назва Виробник Інформація Доступність
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BS2114F-E2 BS2114F-E2 Виробник : ROHM 2736505.pdf Description: ROHM - BS2114F-E2 - MOSFET-Treiber, High-Side und Low-Side, 10V bis 20V Versorgungsspannung, 250ns Verzögerung, SOP-8
Sinkstrom: -
Treiberkonfiguration: High-Side und Low-Side
Leistungsschalter: MOSFET
Eingang: Invertierend
MSL: MSL 1 - unbegrenzt
Anzahl der Kanäle: 2
Betriebstemperatur, min.: -40
Versorgungsspannung, min.: 10
Quellstrom: -
Bauform - Treiber: SOP
Anzahl der Pins: 8
Produktpalette: -
Versorgungsspannung, max.: 20
Eingabeverzögerung: 250
Ausgabeverzögerung: 250
Betriebstemperatur, max.: 125
SVHC: No SVHC (16-Jan-2020)
товар відсутній
BS2114F-E2 BS2114F-E2 Виробник : ROHM 2736505.pdf Description: ROHM - BS2114F-E2 - MOSFET-Treiber, High-Side und Low-Side, 10V bis 20V Versorgungsspannung, 250ns Verzögerung, SOP-8
SVHC: No SVHC (16-Jan-2020)
товар відсутній
BS2114F-E2 BS2114F-E2 Виробник : Rohm Semiconductor Description: 600V HIGH VOLTAGE HIGH & LOW-SID
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOP
Rise / Fall Time (Typ): 30ns, 30ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.6V
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
BS2114F-E2 BS2114F-E2 Виробник : Rohm Semiconductor Description: 600V HIGH VOLTAGE HIGH & LOW-SID
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOP
Rise / Fall Time (Typ): 30ns, 30ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.6V
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній