BSG0810NDIATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 25V 19A/39A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A, 39A
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Description: MOSFET 2N-CH 25V 19A/39A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A, 39A
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5000+ | 86.25 грн |
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Технічний опис BSG0810NDIATMA1 Infineon Technologies
Description: MOSFET 2N-CH 25V 19A/39A TISON8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 19A, 39A, Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V, Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V, FET Feature: Logic Level Gate, 4.5V Drive, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TISON-8.
Інші пропозиції BSG0810NDIATMA1 за ціною від 80.99 грн до 216.22 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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BSG0810NDIATMA1 | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 25V 19A/39A TISON8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 19A, 39A Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TISON-8 |
на замовлення 9850 шт: термін постачання 21-31 дні (днів) |
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BSG0810NDIATMA1 | Виробник : Infineon Technologies | MOSFET TRENCH <= 40V |
на замовлення 10069 шт: термін постачання 250-259 дні (днів) |
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