BSN304,126

BSN304,126 NXP Semiconductors


bsn304_3.pdf Виробник: NXP Semiconductors
Trans MOSFET N-CH 300V 0.3A 3-Pin TO-92 Ammo
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Технічний опис BSN304,126 NXP Semiconductors

Description: MOSFET N-CH 300V 300MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 6Ohm @ 250mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-92-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V.

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BSN304,126 BSN304,126 Виробник : NXP USA Inc. BSN304.pdf Description: MOSFET N-CH 300V 300MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 250mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
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