BSO303PH Infineon Technologies


INFNS16523-1.pdf?t.download=true&u=5oefqw Виробник: Infineon Technologies
Description: 7A, 30V, 0.021OHM, 2-ELEMENT, P
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2678pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Active
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Технічний опис BSO303PH Infineon Technologies

Description: 7A, 30V, 0.021OHM, 2-ELEMENT, P, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2678pF @ 25V, Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 100µA, Supplier Device Package: PG-DSO-8, Part Status: Active.

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BSO303P H BSO303P H Виробник : Infineon Technologies Infineon_BSO303P_H_DS_v01_03_en-3160717.pdf MOSFET P-Ch -30V -8.2A DSO-8 OptiMOS P
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