BSO350N03 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET 2N-CH 30V 5A 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 6µA
Supplier Device Package: PG-DSO-8
на замовлення 1832 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 742+ | 26.39 грн |
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Технічний опис BSO350N03 Infineon Technologies
Description: MOSFET 2N-CH 30V 5A 8DSO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5A, Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V, Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 6µA, Supplier Device Package: PG-DSO-8.
Інші пропозиції BSO350N03
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| BSO350N03 | Виробник : Infineon |
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на замовлення 2120 шт: термін постачання 14-28 дні (днів) |
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| BSO350N03 | Виробник : INFINEON |
09+ SOP8 |
на замовлення 4120 шт: термін постачання 14-28 дні (днів) |
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BSO350N03 | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 30V 5A 8DSO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 6µA Supplier Device Package: PG-DSO-8 |
товар відсутній |
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BSO350N03 | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 30V 5A 8DSO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 6µA Supplier Device Package: PG-DSO-8 |
товар відсутній |