BSO613SPVGXUMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET P-CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-DSO-8-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-DSO-8-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 30.09 грн |
5000+ | 27.6 грн |
12500+ | 26.33 грн |
Відгуки про товар
Написати відгук
Технічний опис BSO613SPVGXUMA1 Infineon Technologies
Description: MOSFET P-CH 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta), Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PG-DSO-8-6, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції BSO613SPVGXUMA1 за ціною від 20.88 грн до 94.78 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BSO613SPVGXUMA1 | Виробник : Infineon Technologies |
Description: MOSFET P-CH 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PG-DSO-8-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 21974 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
BSO613SPVGXUMA1 | Виробник : Infineon Technologies | Trans MOSFET P-CH 60V 3.44A T/R |
на замовлення 1407 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
BSO613SPVGXUMA1 | Виробник : Infineon Technologies | MOSFET TRENCH 40<-<100V |
на замовлення 303 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||
BSO613SPVGXUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.44A Pulsed drain current: -13.8A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||
BSO613SPVGXUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.44A Pulsed drain current: -13.8A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of channel: enhanced |
товар відсутній |