BSR302NL6327HTSA1

BSR302NL6327HTSA1 Infineon Technologies


BSR302N.pdf Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 3.7A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-SC59-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
на замовлення 3000 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+6.69 грн
Мінімальне замовлення: 3000
Відгуки про товар
Написати відгук

Технічний опис BSR302NL6327HTSA1 Infineon Technologies

Description: MOSFET N-CH 30V 3.7A SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2V @ 30µA, Supplier Device Package: PG-SC59-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V.

Інші пропозиції BSR302NL6327HTSA1

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
BSR302NL6327HTSA1 BSR302NL6327HTSA1 Виробник : Infineon Technologies Infineon-BSR302N-DS-v01_03-en-1226544.pdf MOSFET N-Ch 30V 3.7A SOT-23-3
на замовлення 2952 шт:
термін постачання 21-30 дні (днів)
BSR302NL6327HTSA1 BSR302NL6327HTSA1 Виробник : INFINEON TECHNOLOGIES BSR302NL6327HTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
Mounting: SMD
Case: SC59
Power dissipation: 0.5W
Technology: OptiMOS™ 2
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 3.7A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
BSR302NL6327HTSA1 BSR302NL6327HTSA1 Виробник : Infineon Technologies BSR302N.pdf Description: MOSFET N-CH 30V 3.7A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-SC59-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
товар відсутній
BSR302NL6327HTSA1 BSR302NL6327HTSA1 Виробник : Infineon Technologies BSR302N.pdf Description: MOSFET N-CH 30V 3.7A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-SC59-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
товар відсутній
BSR302NL6327HTSA1 BSR302NL6327HTSA1 Виробник : INFINEON TECHNOLOGIES BSR302NL6327HTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
Mounting: SMD
Case: SC59
Power dissipation: 0.5W
Technology: OptiMOS™ 2
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 3.7A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
товар відсутній