Технічний опис BSR92PL6327HTSA1 Infineon Technologies
Description: MOSFET P-CH 250V 140MA SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 140mA (Ta), Rds On (Max) @ Id, Vgs: 11Ohm @ 140mA, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 130µA, Supplier Device Package: PG-SC59-3, Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 109 pF @ 25 V.
Інші пропозиції BSR92PL6327HTSA1
Фото | Назва | Виробник | Інформація |
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BSR92PL6327HTSA1 | Виробник : Infineon Technologies | Trans MOSFET P-CH 250V 0.14A Automotive 3-Pin SC-59 T/R |
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BSR92PL6327HTSA1 | Виробник : Infineon Technologies |
Description: MOSFET P-CH 250V 140MA SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) Rds On (Max) @ Id, Vgs: 11Ohm @ 140mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 130µA Supplier Device Package: PG-SC59-3 Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 109 pF @ 25 V |
товар відсутній |
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BSR92PL6327HTSA1 | Виробник : Infineon Technologies | MOSFET P-Ch -250V 140mA SOT-23-3 |
товар відсутній |