BU2008-M3/51 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: BRIDGE RECT 1P 800V 20A BU
Packaging: Tray
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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Технічний опис BU2008-M3/51 Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 20A BU, Packaging: Tray, Package / Case: 4-SIP, BU, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: isoCINK+™ BU, Part Status: Active, Voltage - Peak Reverse (Max): 800 V, Current - Average Rectified (Io): 20 A, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A, Current - Reverse Leakage @ Vr: 5 µA @ 800 V.
Інші пропозиції BU2008-M3/51
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| BU2008-M3/51 | Виробник : Vishay General Semiconductor |
Bridge Rectifiers 20A,800V,STD,INLINE POWER BRIDGE |
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