BUJ403A/DG,127 WeEn Semiconductors
Виробник: WeEn Semiconductors
Description: TRANS NPN 550V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 550 V
Power - Max: 100 W
Description: TRANS NPN 550V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Supplier Device Package: TO-220AB
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 550 V
Power - Max: 100 W
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис BUJ403A/DG,127 WeEn Semiconductors
Description: TRANS NPN 550V 6A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 2A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V, Supplier Device Package: TO-220AB, Part Status: Active, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 550 V, Power - Max: 100 W.
Інші пропозиції BUJ403A/DG,127
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
BUJ403A/DG,127 | Виробник : WeEn Semiconductors | Bipolar Transistors - BJT NPN POWER TRANSISTOR |
товар відсутній |