BUJD203AD,118 WeEn Semiconductors


BUJD203AD.pdf Виробник: WeEn Semiconductors
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 425V; 4A; 80W; DPAK
Power dissipation: 80W
Polarisation: bipolar
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Mounting: SMD
Case: DPAK
Collector-emitter voltage: 425V
Current gain: 11...22
Collector current: 4A
Type of transistor: NPN
кількість в упаковці: 1 шт
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Технічний опис BUJD203AD,118 WeEn Semiconductors

Description: TRANS NPN 425V 4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 11 @ 2A, 5V, Supplier Device Package: DPAK, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 425 V, Power - Max: 80 W.

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BUJD203AD,118 BUJD203AD,118 Виробник : WeEn Semiconductors bujd203ad.pdf Description: TRANS NPN 425V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 11 @ 2A, 5V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 425 V
Power - Max: 80 W
товар відсутній
BUJD203AD,118 BUJD203AD,118 Виробник : WeEn Semiconductors bujd203ad.pdf Description: TRANS NPN 425V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 11 @ 2A, 5V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 425 V
Power - Max: 80 W
товар відсутній
BUJD203AD,118 BUJD203AD,118 Виробник : WeEn Semiconductors BUJD203AD-1846814.pdf Bipolar Transistors - BJT NPN 425 V 4 A
товар відсутній
BUJD203AD,118 Виробник : WeEn Semiconductors BUJD203AD.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 425V; 4A; 80W; DPAK
Power dissipation: 80W
Polarisation: bipolar
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Mounting: SMD
Case: DPAK
Collector-emitter voltage: 425V
Current gain: 11...22
Collector current: 4A
Type of transistor: NPN
товар відсутній