BUK6C2R1-55C,118 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 55V 228A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 228A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V
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Технічний опис BUK6C2R1-55C,118 Nexperia USA Inc.
Description: MOSFET N-CH 55V 228A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D²Pak (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 228A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: D2PAK-7, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V.
Інші пропозиції BUK6C2R1-55C,118
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BUK6C2R1-55C,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 55V 228A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 228A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK-7 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V |
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BUK6C2R1-55C,118 | Виробник : Nexperia |
MOSFET N-chan TrenchMOS FET |
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