BXW60M1K2J BRIDGELUX
Виробник: BRIDGELUXCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 240A; 271.7W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 170nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -3...18V
Pulsed drain current: 240A
Mounting: THT
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 60A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 271.7W
кількість в упаковці: 1 шт
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Технічний опис BXW60M1K2J BRIDGELUX
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 240A; 271.7W, Polarisation: unipolar, Kind of package: tube, Features of semiconductor devices: Kelvin terminal, Gate charge: 170nC, Technology: SiC, Kind of channel: enhanced, Gate-source voltage: -3...18V, Pulsed drain current: 240A, Mounting: THT, Case: TO247-4, Drain-source voltage: 1.2kV, Drain current: 60A, On-state resistance: 80mΩ, Type of transistor: N-MOSFET, Power dissipation: 271.7W, кількість в упаковці: 1 шт.
Інші пропозиції BXW60M1K2J
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BXW60M1K2J | Виробник : BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 240A; 271.7W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 170nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -3...18V Pulsed drain current: 240A Mounting: THT Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 60A On-state resistance: 80mΩ Type of transistor: N-MOSFET Power dissipation: 271.7W |
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