Технічний опис BYD17K,135 NXP Semiconductors
Description: DIODE AVALANCHE 800V 1.5A MELF, Packaging: Tape & Reel (TR), Package / Case: SOD-87, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 µs, Technology: Avalanche, Capacitance @ Vr, F: 21pF @ 0V, 1MHz, Current - Average Rectified (Io): 1.5A, Supplier Device Package: MELF, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 800 V.
Інші пропозиції BYD17K,135
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BYD17K,135 | Виробник : NXP USA Inc. |
 Description: DIODE AVALANCHE 800V 1.5A MELFPackaging: Tape & Reel (TR) Package / Case: SOD-87 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Avalanche Capacitance @ Vr, F: 21pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
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BYD17K,135 | Виробник : NXP USA Inc. |
Description: DIODE AVALANCHE 800V 1.5A MELF Packaging: Cut Tape (CT) Package / Case: SOD-87 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Avalanche Capacitance @ Vr, F: 21pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товар відсутній |