Технічний опис BYD77B,115 NXP Semiconductors
Description: DIODE AVALANCHE 100V 850MA MELF, Packaging: Tape & Reel (TR), Package / Case: SOD-87, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Avalanche, Capacitance @ Vr, F: 50pF @ 0V, 1MHz, Current - Average Rectified (Io): 850mA, Supplier Device Package: MELF, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 100 V.
Інші пропозиції BYD77B,115
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BYD77B,115 | Виробник : NXP USA Inc. |
 Description: DIODE AVALANCHE 100V 850MA MELFPackaging: Tape & Reel (TR) Package / Case: SOD-87 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Avalanche Capacitance @ Vr, F: 50pF @ 0V, 1MHz Current - Average Rectified (Io): 850mA Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
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