BYV30B-600PJ WeEn Semiconductor(Hong Kong)Co.,Limited


byv30b-600p.pdf Виробник: WeEn Semiconductor(Hong Kong)Co.,Limited
Diode Switching 600V 30A 3-Pin(2+Tab) D2PAK
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис BYV30B-600PJ WeEn Semiconductor(Hong Kong)Co.,Limited

Description: DIODE GEN PURP 600V 30A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: D2PAK, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.

Інші пропозиції BYV30B-600PJ

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
BYV30B-600PJ Виробник : Ween byv30b-600p.pdf BYV30B-600PJ/TO263
товар відсутній
BYV30B-600PJ BYV30B-600PJ Виробник : WeEn Semiconductors byv30b-600p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 75ns; D2PAK,SOT404; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.35V
Max. forward impulse current: 330A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
BYV30B-600PJ BYV30B-600PJ Виробник : WeEn Semiconductors byv30b-600p.pdf Description: DIODE GEN PURP 600V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BYV30B-600PJ BYV30B-600PJ Виробник : WeEn Semiconductors WEEN_S_A0009379844_1-2576167.pdf Rectifiers BYV30B-600PJ/TO263
товар відсутній
BYV30B-600PJ BYV30B-600PJ Виробник : WeEn Semiconductors byv30b-600p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 75ns; D2PAK,SOT404; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.35V
Max. forward impulse current: 330A
Kind of package: reel; tape
товар відсутній