BYV32E-200PQ

BYV32E-200PQ WeEn Semiconductors


BYV32E-200P-1846708.pdf Виробник: WeEn Semiconductors
Rectifiers Dual Ultrafast Power Diode
на замовлення 5962 шт:

термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+96.63 грн
10+ 85.34 грн
100+ 57.78 грн
500+ 47.77 грн
1000+ 37.63 грн
2000+ 36.51 грн
5000+ 32.33 грн
Мінімальне замовлення: 4
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Технічний опис BYV32E-200PQ WeEn Semiconductors

Description: DIODE ARRAY GP 200V 10A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-220AB, Operating Temperature - Junction: 175°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8, Voltage Coupled to Current - Reverse Leakage @ Vr: 200.

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BYV32E-200PQ BYV32E-200PQ Виробник : WeEn Semiconductor(Hong Kong)Co.,Limited byv32e-200p.pdf Rectifier Diode Switching 200V 20A 25ns 3-Pin(3+Tab) TO-220AB Rail
товар відсутній
BYV32E-200PQ BYV32E-200PQ Виробник : Ween byv32e-200p.pdf Rectifier Diode Switching 200V 20A 25ns 3-Pin(3+Tab) TO-220AB Rail
товар відсутній
BYV32E-200PQ Виробник : WeEn Semiconductors BYV32E-200PQ.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 125A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 125A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 18ns
кількість в упаковці: 1 шт
товар відсутній
BYV32E-200PQ BYV32E-200PQ Виробник : WeEn Semiconductors byv32e-200p.pdf Description: DIODE ARRAY GP 200V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
товар відсутній
BYV32E-200PQ Виробник : WeEn Semiconductors BYV32E-200PQ.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 125A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 125A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 18ns
товар відсутній