Технічний опис BYW34-TR Vishay
Category: THT universal diodes, Description: Diode: rectifying; THT; 400V; 2A; reel; Ifsm: 50A; SOD57; Ufmax: 1.1V, Type of diode: rectifying, Mounting: THT, Max. off-state voltage: 0.4kV, Load current: 2A, Semiconductor structure: single diode, Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated, Kind of package: reel, Max. forward impulse current: 50A, Case: SOD57, Max. forward voltage: 1.1V, Leakage current: 0.15mA, Reverse recovery time: 200ns, кількість в упаковці: 5000 шт.
Інші пропозиції BYW34-TR
| Фото | Назва | Виробник | Інформація |
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BYW34-TR | Виробник : VISHAY |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 2A; reel; Ifsm: 50A; SOD57; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Kind of package: reel Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1.1V Leakage current: 0.15mA Reverse recovery time: 200ns кількість в упаковці: 5000 шт |
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BYW34-TR | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 400V 2A SOD57 Packaging: Tape & Reel (TR) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
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BYW34-TR | Виробник : Vishay Semiconductors |
Rectifiers 2.0 Amp 400 Volt 50 Amp IFSM |
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BYW34-TR | Виробник : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 2A; reel; Ifsm: 50A; SOD57; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Kind of package: reel Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1.1V Leakage current: 0.15mA Reverse recovery time: 200ns |
товар відсутній |