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C3M0160120J-TR Wolfspeed


c3m0160120j.pdf Виробник: Wolfspeed
C3M0160120J-TR
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Технічний опис C3M0160120J-TR Wolfspeed

Description: SIC, MOSFET, 160M, 1200V, TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 2.33mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V.

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C3M0160120J-TR Виробник : Wolfspeed, Inc. C3M0160120J.pdf Description: SIC, MOSFET, 160M, 1200V, TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
товар відсутній
C3M0160120J-TR C3M0160120J-TR Виробник : Wolfspeed C3M0160120J-2935246.pdf MOSFET SiC, MOSFET, 160mohm, 1200V, TO-263-7 T&R, Industrial, Gen 3
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