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CAS300M17BM2

CAS300M17BM2 Wolfspeed


Виробник: Wolfspeed
Discrete Semiconductor Modules 1700V, 300A, SiC Half Bridge Module
на замовлення 51 шт:

термін постачання 21-30 дні (днів)
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Технічний опис CAS300M17BM2 Wolfspeed

Description: MOSFET 2N-CH 1700V 325A MODULE, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1760W, Drain to Source Voltage (Vdss): 1700V (1.7kV), Current - Continuous Drain (Id) @ 25°C: 325A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V, Rds On (Max) @ Id, Vgs: 10mOhm @ 225A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V, Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ), Supplier Device Package: Module, Part Status: Not For New Designs.

Інші пропозиції CAS300M17BM2

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CAS300M17BM2 CAS300M17BM2 Виробник : Wolfspeed 492304838569883cas300m17bm2.pdf Trans MOSFET N-CH SiC 1.7KV 325A 7-Pin Box
товар відсутній
CAS300M17BM2 CAS300M17BM2 Виробник : Wolfspeed(CREE) CAS300M17BM2.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.7kV; 225A; Half-Bridge Module
Topology: MOSFET half-bridge
Technology: C2M™; SiC; Z-Rec®
Case: Half-Bridge Module
On-state resistance: 8mΩ
Operating temperature: -40...125°C
Power dissipation: 1.76kW
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: -5...20V
Pulsed drain current: 900A
Semiconductor structure: transistor/transistor
Drain current: 225A
Polarisation: unipolar
Drain-source voltage: 1.7kV
Electrical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
CAS300M17BM2 CAS300M17BM2 Виробник : Wolfspeed, Inc. Description: MOSFET 2N-CH 1700V 325A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1760W
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 325A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V
Rds On (Max) @ Id, Vgs: 10mOhm @ 225A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V
Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
Supplier Device Package: Module
Part Status: Not For New Designs
товар відсутній
CAS300M17BM2 CAS300M17BM2 Виробник : Wolfspeed(CREE) CAS300M17BM2.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.7kV; 225A; Half-Bridge Module
Topology: MOSFET half-bridge
Technology: C2M™; SiC; Z-Rec®
Case: Half-Bridge Module
On-state resistance: 8mΩ
Operating temperature: -40...125°C
Power dissipation: 1.76kW
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate-source voltage: -5...20V
Pulsed drain current: 900A
Semiconductor structure: transistor/transistor
Drain current: 225A
Polarisation: unipolar
Drain-source voltage: 1.7kV
Electrical mounting: screw
товар відсутній