CMLDM8120G TR PBFREE Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: MOSFET P-CH 20V 860MA SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V
Description: MOSFET P-CH 20V 860MA SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V
на замовлення 1439 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
9+ | 32.42 грн |
11+ | 26.78 грн |
100+ | 20.03 грн |
500+ | 14.77 грн |
1000+ | 11.41 грн |
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Технічний опис CMLDM8120G TR PBFREE Central Semiconductor Corp
Description: MOSFET P-CH 20V 860MA SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 860mA (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): 8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V.
Інші пропозиції CMLDM8120G TR PBFREE за ціною від 10.59 грн до 35.04 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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CMLDM8120G TR PBFREE | Виробник : Central Semiconductor | MOSFET P-Ch Enh FET 20VDS 8.0VGS |
на замовлення 573 шт: термін постачання 21-30 дні (днів) |
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CMLDM8120G TR PBFREE | Виробник : Central Semiconductor Corp |
Description: MOSFET P-CH 20V 860MA SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 860mA (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V |
товар відсутній |