CSD13383F4T Texas Instruments
Виробник: Texas Instruments
Description: MOSFET N-CH 12V 2.9A 3PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 3-PICOSTAR
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 6 V
Description: MOSFET N-CH 12V 2.9A 3PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 3-PICOSTAR
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 6 V
на замовлення 14750 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
250+ | 42.22 грн |
500+ | 35.92 грн |
1250+ | 28.36 грн |
2500+ | 24.84 грн |
6250+ | 23.6 грн |
12500+ | 22.71 грн |
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Технічний опис CSD13383F4T Texas Instruments
Description: MOSFET N-CH 12V 2.9A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 3-PICOSTAR, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 6 V.
Інші пропозиції CSD13383F4T за ціною від 21.16 грн до 65 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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CSD13383F4T | Виробник : Texas Instruments | MOSFET 12V N-Channel FemtoFET MOSFET |
на замовлення 986 шт: термін постачання 21-30 дні (днів) |
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CSD13383F4T | Виробник : Texas Instruments |
Description: MOSFET N-CH 12V 2.9A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 6 V |
на замовлення 15125 шт: термін постачання 21-31 дні (днів) |
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CSD13383F4T | Виробник : Texas Instruments | Trans MOSFET N-CH 12V 2.9A 3-Pin PicoStar T/R |
товар відсутній |
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CSD13383F4T | Виробник : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 2.9A; Idm: 18.5A; 500mW Kind of package: reel; tape On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Drain current: 2.9A Drain-source voltage: 12V Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 18.5A Case: PICOSTAR3 Mounting: SMD кількість в упаковці: 1 шт |
товар відсутній |
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CSD13383F4T | Виробник : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 2.9A; Idm: 18.5A; 500mW Kind of package: reel; tape On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Drain current: 2.9A Drain-source voltage: 12V Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 18.5A Case: PICOSTAR3 Mounting: SMD |
товар відсутній |