Технічний опис DDB6U75N16W1RB11BOMA1 Infineon Technologies
Description: IGBT MOD 1200V 69A 335W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 69 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 335 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V.
Інші пропозиції DDB6U75N16W1RB11BOMA1
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DDB6U75N16W1RB11BOMA1 | Виробник : Infineon Technologies |
 Description: IGBT MOD 1200V 69A 335WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 69 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 335 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V |
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