DF400R12KE3HOSA1

DF400R12KE3HOSA1 Infineon Technologies


Infineon-DF400R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b431ae84551c Виробник: Infineon Technologies
Description: IGBT MOD 1200V 580A 2000W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 329 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+12967.78 грн
Мінімальне замовлення: 2
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Технічний опис DF400R12KE3HOSA1 Infineon Technologies

Description: IGBT MOD 1200V 580A 2000W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 580 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 2000 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 28 nF @ 25 V.

Інші пропозиції DF400R12KE3HOSA1

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
DF400R12KE3HOSA1 DF400R12KE3HOSA1 Виробник : Infineon Technologies 146ds_df400r12ke3_3_0.pdffolderiddb3a304412b407950112b4095b0601e3fil.pdf Trans IGBT Module N-CH 1200V 580A 2000000mW Automotive 5-Pin 62MM-1 Tray
товар відсутній
DF400R12KE3HOSA1 DF400R12KE3HOSA1 Виробник : INFINEON TECHNOLOGIES DF400R12KE3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Power dissipation: 2kW
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
DF400R12KE3HOSA1 DF400R12KE3HOSA1 Виробник : Infineon Technologies Infineon-DF400R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b431ae84551c Description: IGBT MOD 1200V 580A 2000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
товар відсутній
DF400R12KE3HOSA1 DF400R12KE3HOSA1 Виробник : Infineon Technologies Infineon_DF400R12KE3_DS_v03_00_EN-3361354.pdf IGBT Modules MEDIUM POWER 62MM
товар відсутній
DF400R12KE3HOSA1 DF400R12KE3HOSA1 Виробник : INFINEON TECHNOLOGIES DF400R12KE3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Power dissipation: 2kW
Mechanical mounting: screw
товар відсутній