DI003N03SQ2 DIOTEC SEMICONDUCTOR
Виробник: DIOTEC SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 3A; Idm: 9A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Pulsed drain current: 9A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±18V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 3A; Idm: 9A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3A
Pulsed drain current: 9A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±18V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис DI003N03SQ2 DIOTEC SEMICONDUCTOR
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 3A; Idm: 9A; 1.6W; SO8, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 3A, Pulsed drain current: 9A, Power dissipation: 1.6W, Case: SO8, Gate-source voltage: ±18V, On-state resistance: 11mΩ, Mounting: SMD, Gate charge: 4.5nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції DI003N03SQ2
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DI003N03SQ2 | Виробник : DComponents | Description: MOSFET, SO-8, 30V |
товар відсутній |
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DI003N03SQ2 | Виробник : Diotec Semiconductor | MOSFET MOSFET, SO-8, 30V, 3A, 150C, N |
товар відсутній |
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DI003N03SQ2 | Виробник : DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 3A; Idm: 9A; 1.6W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 3A Pulsed drain current: 9A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±18V On-state resistance: 11mΩ Mounting: SMD Gate charge: 4.5nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |