DI005P04PW-AQ DIOTEC SEMICONDUCTOR


Виробник: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; Idm: -40A; 2W; QFN2X2
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.4A
Pulsed drain current: -40A
Power dissipation: 2W
Case: QFN2X2
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
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Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; Idm: -40A; 2W; QFN2X2, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -40V, Drain current: -5.4A, Pulsed drain current: -40A, Power dissipation: 2W, Case: QFN2X2, Gate-source voltage: ±12V, On-state resistance: 55mΩ, Mounting: SMD, Gate charge: 19nC, Kind of package: reel; tape, Kind of channel: enhanced, Application: automotive industry.

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DI005P04PW-AQ Виробник : DIOTEC SEMICONDUCTOR Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -5.4A; Idm: -40A; 2W; QFN2X2
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5.4A
Pulsed drain current: -40A
Power dissipation: 2W
Case: QFN2X2
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній